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Power MOSFET Device JingYang JY3404X Featuring Low RDS ON and Suitable for Load Switch Applications

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Power MOSFET Device JingYang JY3404X Featuring Low RDS ON and Suitable for Load Switch Applications

Drain to Source Voltage : 30V

Current - Continuous Drain(Id) : 5.8A

Operating Temperature - : -55℃~+150℃

RDS(on) : 21mΩ@10V

Gate Threshold Voltage (Vgs(th)) : 1.2V

Type : N-Channel

Reverse Transfer Capacitance (Crss@Vds) : 90pF

Number : 1 N-channel

Output Capacitance(Coss) : 125pF

Pd - Power Dissipation : 1.5W

Input Capacitance(Ciss) : 560pF@15V

Gate Charge(Qg) : 7nC@5V

Description : N-Channel 30V 5.8A 1.5W Surface Mount SOT23-3L

Mfr. Part # : JY3404X

Model Number : JY3404X

Package : SOT23-3L

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Product Overview

The N-Channel Trench Power MOSFET utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 4.5V. This device is ideal for load switch and PWM applications, offering high power and current handling capability. It is a lead-free product available in a surface mount package.

Product Attributes

Brand: JY (implied by www.jy-electronics.com.cn)
Origin: China (implied by www.jy-electronics.com.cn)
Material: Lead-free product
Certifications: Lead-free product acquired

Technical Specifications

Parameter	Conditions	Min	Typ	Max	Unit
VDS	Drain-Source Voltage (VGS=0V			30	V
VGS	Gate-Source Voltage (VDS=0V)			20	V
ID	Drain Current-Continuous			5.8	A
IDM (pluse)	Drain Current-Continuous@ Current-Pulsed (Note 1)			30	A
PD	Maximum Power Dissipation			1.5	W
TJ,TSTG	Operating Junction and Storage Temperature Range	-55		150
RJA	Thermal Resistance, Junction-to-Ambient		85		/W
BVDSS	Drain-Source Breakdown Voltage VGS=0V ID=250A	30	34		V
IDSS	Zero Gate Voltage Drain Current VDS=30V,VGS=0V			1	A
IGSS	Gate-Body Leakage Current VGS=20V,VDS=0V			100	nA
VGS(th)	Gate Threshold Voltage VDS=VGS,ID=250A	1.2	1.6	2.4	V
gFS	Forward Transconductance VDS=5V,ID=5A	3	5.8		S
RDS(ON)	Drain-Source On-State Resistance VGS=10V, ID=5.8A		21	30	m
RDS(ON)	Drain-Source On-State Resistance VGS=4.5V, ID=2.9A		32	42	m
Ciss	Input Capacitance VDS=15V,VGS=0V, f=1.0MHz		560		pF
Coss	Output Capacitance		125		pF
Crss	Reverse Transfer Capacitance		90		pF
td(on)	Turn-on Delay Time VDD=15V,ID=5.5A,RL=15 VGS=10V,RG=2.5		10		nS
tr	Turn-on Rise Time		4		nS
td(off)	Turn-Off Delay Time		27		nS
tf	Turn-Off Fall Time		5		nS
Qg	Total Gate Charge VDS=10V,ID=3.6A, VGS=5V		7		nC
Qgs	Gate-Source Charge		1.5		nC
Qgd	Gate-Drain Charge		3		nC
ISD	Source-Drain Current(Body Diode)			5.8	A
VSD	Forward on Voltage(Note 1) VGS=0V,IS=1A		0.78	1	V

2405091034_JingYang-JY3404X_C5380424.pdf

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