Home > Single IGBTs >

Jilin Sino Microelectronics JT015N065FED N channel IGBT transistor ideal for UPS power supply design

Product Categories

Bipolar Transistor Arrays [120]
Bridge Rectifiers [1296]
JFETs [73]
Single Bipolar Transistors [2284]
Power Driver Modules [154]
Current Regulation - Diodes, Transistors [4]
Single IGBTs [536]
DIACs, SIDACs [39]
Single, Pre-Biased Bipolar Transistors [1334]
SCRs [158]
SCRs - Modules [48]
TRIACs [535]
RF Diodes [12]
Single Diodes [3000]
Single Zener Diodes [3000]
Variable Capacitance (Varicaps, Varactors) [79]
Single FETs, MOSFETs [3000]

Hefei Purple Horn E-Commerce Co., Ltd.

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

Jilin Sino Microelectronics JT015N065FED N channel IGBT transistor ideal for UPS power supply design

Pd - Power Dissipation : 31W

Td(off) : -

Td(on) : -

Collector-Emitter Breakdown Voltage (Vces) : 650V

Input Capacitance(Cies) : 880pF@25V

IGBT Type : -

Gate-Emitter Threshold Voltage (Vge(th)@Ic) : 6.5V@250uA

Gate Charge(Qg) : -

Operating Temperature : -55℃~+150℃@(Tj)

Reverse Recovery Time(trr) : -

Switching Energy(Eoff) : -

Turn-On Energy (Eon) : -

Description : 31W 650V TO-220MF Single IGBTs RoHS

Mfr. Part # : JT015N065FED

Model Number : JT015N065FED

Package : TO-220MF

Contact Now

Product Overview

The JT015N065FED is an N-channel Insulated Gate Bipolar Transistor (IGBT) designed for general-purpose inverters and UPS power supplies. It features low gate charge, Trench FS Technology, and a typical saturation voltage of 1.6V at 15A and 25C. This RoHS-compliant product is available in a TO-220MF package.

Product Attributes

Brand: Jilin Sino-microelectronics Co., Ltd
Origin: China
Material: N-channel IGBT
Color: Not specified
Certifications: RoHS
Halogen Free: No

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
MAIN CHARACTERISTICS
Collector Current (continuous)	IC	15	A	T=100
Collector Current (continuous)	IC	30	A	T=25
Collector-Emitter Voltage	VCES	650	V	-
Vcesat-typ	VCE(sat)	1.6	V	VGE=15V, IC=15A, TC=25
ABSOLUTE MAXIMUM RATINGS
Collector-Emmiter Voltage	Vces	650	V	(Tc=25)
Collector Current-continuous	IC	30	A	(T=25)
Collector Current-continuous	IC	15	A	(T=100)
Collector Current pulse (note 1)	ICM	45	A	-
Gate-Emmiter Voltage	VGES	20	V	-
Power Dissipation	PD	31	W	TC=25
Operating and Storage Temperature Range	TJTSTG	-55+150		-
Maximum Lead Temperature for Soldering Purposes	TL	300		-
ELECTRICAL CHARACTERISTICS
Collector-Emmiter Voltage	BVCES	650	V	IC=500A, VGE=0V
Breakdown Voltage Temperature Coefficient	BVCES/TJ	0.5	V/	IC=1mA, referenced to 25
Zero Gate Voltage Collector Current	ICES	10	A	VCE=650V, VGE=0V, TC=25
Gate Threshold Voltage	VGE(th)	4.0 - 6.5	V	VCE = VGE , IC=250A
Collector-Emmiter saturation Voltage	VCESAT	1.6 - 2.0	V	VGE=15V IC=15A Tc=25
Input capacitance	Cies	880	pF	VCE=25V, VGE=0V, f=1.0MHZ
Thermal Resistance, Junction to Case	Rth(j-c)	4.8	/W	-
Thermal Resistance, Junction to Ambient	Rth(j-A)	62.5	/W	-
Anti-Parallel Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward Voltage	VF	1.4 - 2.2	V	VGE=0V, IS=15A

2411201842_Jilin-Sino-Microelectronics-JT015N065FED_C2693274.pdf

Quality Jilin Sino Microelectronics JT015N065FED N channel IGBT transistor ideal for UPS power supply design wholesale

Jilin Sino Microelectronics JT015N065FED N channel IGBT transistor ideal for UPS power supply design Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Hefei Purple Horn E-Commerce Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!