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General purpose dual NPN PNP transistor LRC LBC817-25DPMT1G for switching and amplification circuits

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General purpose dual NPN PNP transistor LRC LBC817-25DPMT1G for switching and amplification circuits

Current - Collector Cutoff : 5uA

Emitter-Base Voltage(Vebo) : 5V

Pd - Power Dissipation : 300mW

Transition frequency(fT) : 100MHz

type : NPN+PNP

Number : 1 NPN + 1 PNP

Current - Collector(Ic) : 500mA

Collector - Emitter Voltage VCEO : 45V

Description : Bipolar (BJT) Transistor NPN+PNP 45V 500mA 100MHz Surface Mount SOT-23-6

Mfr. Part # : LBC817-25DPMT1G

Model Number : LBC817-25DPMT1G

Package : SOT-23-6

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Product Overview

The LBC817 series are dual general-purpose NPN/PNP transistors designed for various electronic applications. They are available in different gain options and are suitable for use in general-purpose switching and amplification circuits.

Product Attributes

Brand: LESHAN RADIO COMPANY, LTD.
Material Compliance: RoHS
Prefix 'S-': Indicates Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

Technical Specifications

Model	Type	VCEO (V)	VCBO (V)	VEBO (V)	IC Continuous (mAdc)	PD (mW) (FR-5)	RJA (C/W) (FR-5)	PD (mW) (Alumina)	RJA (C/W) (Alumina)	TJ, Tstg (C)
LBC817-16DPMT1G, LBC817-25DPMT1G, LBC817-40DPMT1G	NPN	45	50	5.0	500	225	556	300	417	-55 to +150
LBC817-16DPMT1G, LBC817-25DPMT1G, LBC817-40DPMT1G	PNP	-45	-50	-5.0	-500	225	556	300	417	-55 to +150
S-LBC817-16DPMT1G, S-LBC817-25DPMT1G, S-LBC817-40DPMT1G	NPN	45	50	5.0	500	225	556	300	417	-55 to +150
S-LBC817-16DPMT1G, S-LBC817-25DPMT1G, S-LBC817-40DPMT1G	PNP	-45	-50	-5.0	-500	225	556	300	417	-55 to +150

Model	Characteristic	Symbol	Min	Typ	Max	Unit	Condition
NPN	CollectorEmitter Breakdown Voltage	V(BR)CEO	45			V	IC = 10 mA
	CollectorEmitter Breakdown Voltage	V(BR)CES	50			V	VEB = 0, IC = 10 A
	EmitterBase Breakdown Voltage	V(BR)EBO	5.0			V	IE = 1.0 A
	Collector Cutoff Current	ICBO			100	nA	VCB = 20 V
	Collector Cutoff Current	ICBO			5.0	A	VCB = 20 V, TA = 150C
	DC Current Gain	hFE	100	160	250		IC = 100 mA, VCE = 1.0 V (BC817-16)
NPN	DC Current Gain	hFE	250	400	600		IC = 500 mA, VCE = 1.0 V
	CollectorEmitter Saturation Voltage	VCE(sat)			0.7	V	IC = 500 mA, IB = 50 mA
	BaseEmitter On Voltage	VBE(on)			1.2	V	IC = 500 mA, VCE = 1.0 V
	CurrentGain Bandwidth Product	fT	100			MHz	IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz
	Output Capacitance	Cobo		10		pF	VCB = 10 V, f = 1.0 MHz
PNP	CollectorEmitter Breakdown Voltage	V(BR)CEO	45			V	IC = 10 mA
	CollectorEmitter Breakdown Voltage	V(BR)CES	50			V	VEB = 0, IC = 10 A
	EmitterBase Breakdown Voltage	V(BR)EBO	5.0			V	IE = 1.0 A
	Collector Cutoff Current	ICBO			100	nA	VCB = 20 V
	Collector Cutoff Current	ICBO			5.0	A	VCB = 20 V, TJ = 150C
	DC Current Gain	hFE	100	160	250		IC = 100 mA, VCE = 1.0 V (BC807-16)
PNP	DC Current Gain	hFE	250	400	600		IC = 500 mA, VCE = 1.0 V
	CollectorEmitter Saturation Voltage	VCE(sat)			0.7	V	IC = 500 mA, IB = 50 mA
	BaseEmitter On Voltage	VBE(on)			1.2	V	IC = 500 mA, IB = 1.0 V
	CurrentGain Bandwidth Product	fT	100			MHz	IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz
	Output Capacitance	Cobo		10		pF	VCB = 10 V, f = 1.0 MHz

2108150130_LRC-LBC817-25DPMT1G_C2857372.pdf

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