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Compact SMD PNP Double Resistor Equipped Transistor Nexperia PUMB18 115 with Reduced Component Count

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Compact SMD PNP Double Resistor Equipped Transistor Nexperia PUMB18 115 with Reduced Component Count

Output Voltage(VO(on)) : -

Input Resistor : 4.7kΩ

Resistor Ratio : 2.1

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 2 PNP Pre-Biased Transistors 50V 100mA 300mW Surface Mount SOT-363

Mfr. Part # : PUMB18,115

Model Number : PUMB18,115

Package : SOT-363

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Product Overview

The Nexperia PEMB18 and PUMB18 are PNP/PNP double Resistor-Equipped Transistors (RET) designed for Surface-Mounted Device (SMD) applications. These devices offer a reduced component count and simplified circuit design due to their built-in bias resistors, leading to lower pick-and-place costs. They are AEC-Q101 qualified, making them suitable for automotive applications. Typical uses include low-current peripheral driving and controlling IC inputs, replacing general-purpose transistors in digital applications.

Product Attributes

Brand: Nexperia (formerly NXP Standard Product business)
Product Type: PNP/PNP double Resistor-Equipped Transistors (RET)
Certification: AEC-Q101 qualified
Package Type: Surface-Mounted Device (SMD) plastic packages

Technical Specifications

Model	Package	NPN/PNP Complement	Package Configuration	R1 (k)	R2/R1 Ratio	Output Current (mA)	Collector-Emitter Voltage (V)
PEMB18	SOT666 (ultra small and flat lead)	PEMD18	-	4.7	-	-100	-50
PUMB18	SOT363 (SC-88, very small)	PUMD18	-	4.7	-	-100	-50

Parameter	Conditions	Min	Typ	Max	Unit
R1 bias resistor (input)	-	3.3	4.7	6.1	k
R2/R1 bias resistor ratio	-	1.7	2.1	2.6	-
Collector-Base Voltage (VCBO)	Open emitter	-	-	-50	V
Collector-Emitter Voltage (VCEO)	Open base	-	-	-50	V
Emitter-Base Voltage (VEBO)	Open collector	-	-	-7	V
Input Voltage (VI)	Positive	-	-	+7	V
Input Voltage (VI)	Negative	-	-	-20	V
Output Current (IO)	-	-	-	-100	mA
Peak Collector Current (ICM)	Single pulse; tp 1 ms	-	-	-100	mA
Total Power Dissipation (Ptot)	Tamb 25 C (PEMB18 SOT666)	-	-	200	mW
Total Power Dissipation (Ptot)	Tamb 25 C (PUMB18 SOT363)	-	-	200	mW
Total Power Dissipation (Ptot)	Tamb 25 C (Per device PEMB18 SOT666)	-	-	300	mW
Total Power Dissipation (Ptot)	Tamb 25 C (Per device PUMB18 SOT363)	-	-	300	mW
Junction Temperature (Tj)	-	-	-	150	C
Ambient Temperature (Tamb)	-	-65	-	+150	C
Storage Temperature (Tstg)	-	-65	-	+150	C
Thermal Resistance (Rth(j-a))	Per transistor, free air (PEMB18 SOT666)	-	-	625	K/W
Thermal Resistance (Rth(j-a))	Per transistor, free air (PUMB18 SOT363)	-	-	625	K/W
Thermal Resistance (Rth(j-a))	Per device, free air (PEMB18 SOT666)	-	-	417	K/W
Thermal Resistance (Rth(j-a))	Per device, free air (PUMB18 SOT363)	-	-	417	K/W
Collector-Base Cut-off Current (ICBO)	VCB = -50 V; IE = 0 A	-	-	-100	nA
Collector-Emitter Cut-off Current (ICEO)	VCE = -30 V; IB = 0 A	-	-	-1	A
Collector-Emitter Cut-off Current (ICEO)	VCE = -30 V; IB = 0 A; Tj = 150 C	-	-	-5	A
Emitter-Base Cut-off Current (IEBO)	VEB = -5 V; IC = 0 A	-	-	-600	A
DC Current Gain (hFE)	VCE = -5 V; IC = -10 mA	50	-	-	-
Collector-Emitter Saturation Voltage (VCEsat)	IC = -10 mA; IB = -0.5 mA	-	-	-100	mV
Off-state Input Voltage (VI(off))	VCE = -5 V; IC = -100 A	-	-0.9	-0.3	V
On-state Input Voltage (VI(on))	VCE = -0.3 V; IC = -20 mA	-2.5	-1.5	-	V
Collector Capacitance (Cc)	VCB = -10 V; IE = ie = 0 A; f = 1 MHz	-	-	3	pF
Transition Frequency (fT)	VCE = -5 V; IC = -10 mA; f = 100 MHz	-	180	-	MHz

2410121745_Nexperia-PUMB18-115_C553494.pdf

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